IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Publication type International Standard
Publication date 2017-08-10
Edition 1.0
Available language(s) English
TC/SC TC 82 - Solar photovoltaic energy systemsrss
ICS 27.160 - Solar energy engineering
Stability date 2019
Pages 13
File size 1342 KB
发表于 2017-9-9 14:04:15