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IEC 62880-1:2017 Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
IEC 62880-1:2017(E) describes a constant temperature (ISOthermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing.
This method is not intended to check production lOTS for shipment, because of the long test time.
Publication type International Standard
Publication date 2017-08-23
Edition 1.0
Available language(s) English
TC/SC TC 47 - Semiconductor devicesrss
ICS 31.080.01 - Semiconductor devices in general
Stability date 2022
Pages 24
File size 1857 KB
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发表于 2017-9-9 14:02:45